Characterization and modelling of MOSFET operating at cryogenic temperature for hybrid superconductor-CMOS circuits

نویسندگان

  • Yijun Feng
  • Peng Zhou
  • Hongying Liu
  • Jun Sun
  • Tian Jiang
چکیده

Short channel MOSFET devices have been fabricated using a commercial 0.25 μm CMOS process and characterized at cryogenic temperatures for further application in hybrid superconductor-CMOS circuits. A 4 K device model has been established through modifying the room temperature CMOS model by taking into account the parameter variation of the discrete MOS devices at cryogenic temperature. We have demonstrated that the circuit simulation based on this model is comparable with the measurement at 4 K on a 31-stage ring oscillator both with and without long wire interconnect; therefore, the cryogenic model is acceptable for circuit simulation. Circuit performance at cryogenic temperature has been studied by a set of ring oscillator experiments and a 60–70% improvement of the propagation delay of MOS device and circuit with interconnect wire at 4 K has been reported.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Scaling Beyond Moore: Single Electron Transistor and Single Atom Transistor Integration on CMOS

Continuous scaling of MOSFET dimensions has led us to the era of nanoelectronics. Multigate FET (MuGFET) architecture with ’nanowire channel’ is being considered as one feasible enabler of MOSFET scaling to end-ofroadmap. Alongside classical CMOS or Moore’s law scaling, many novel device proposals exploiting nanoscale phenomena have been made either. Single Electron Transistor (SET), with its u...

متن کامل

Design and Implementation of MOSFET Circuits and CNTFET, Ternary Multiplier in the Field of Galois

Due to the high density and the low consumption power in the digital integrated circuits, mostly technology of CMOS is used. During the past times, the Metal oxide silicon field effect transistors (MOSFET) had been used for the design and implementation of the digital integrated circuits because they are compact and also they have the less consumption power and delay to the other transistors. B...

متن کامل

Design and Implementation of MOSFET Circuits and CNTFET, Ternary Multiplier in the Field of Galois

Due to the high density and the low consumption power in the digital integrated circuits, mostly technology of CMOS is used. During the past times, the Metal oxide silicon field effect transistors (MOSFET) had been used for the design and implementation of the digital integrated circuits because they are compact and also they have the less consumption power and delay to the other transistors. B...

متن کامل

MOSFET DEGRADATION DUE TO NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI) AND HOT CARRIER INJECTION (HCI) AND ITS IMPLICATIONS FOR RELIABILITY-AWARE VLSI DESIGN A Dissertation

Kufluoglu, Haldun Ph.D., Purdue University, December, 2007. MOSFET Degradation due to Negative Bias Temperature Instability (NBTI) and Hot Carrier Injection (HCI) and Its Implications for Reliability-aware VLSI Design . Major Professor: Muhammad A. Alam. The scaling trends in CMOS technology and operating conditions give rise to serious degradation mechanisms such as Negative Bias Temperature I...

متن کامل

Variable Threshold MOSFET Approach (Through Dynamic Threshold MOSFET) For Universal Logic Gates

In this article, we proposed a Variable threshold MOSFET(VTMOS)approach which is realized from Dynamic Threshold MOSFET(DTMOS), suitable for sub-threshold digital circuit operation .Basically the principle of subthreshold logics is operating MOSFET in sub-threshold region and using the leakage current in that region for switching action, there by drastically decreasing power .To reduce the powe...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2004